unisonic technologies co., ltd ut3443 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r502-557.a p-channel 2.5-v (g-s) mosfet ? description the utc ut3443 is a p-channel power mosfet using utc?s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12v gate rating. ? features * v ds(v) = -20v * i d =-4.5a *r ds(on) < 100m ? @v gs = -2.5v, r ds(on) < 65m ? @v gs = -4.5v ? symbol g (3) s (4) d (1, 2, 5, 6) ? ordering information ordering number pin assignment lead free halogen free package 1, 2, 5, 6 3 4 packing ut3443l-ag6-r UT3443G-AG6-R sot-26 d g s tape reel note: pin assignment: g: gate d: drain s: source ? marking
ut3443 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-557.a ? pin configuration
ut3443 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-557.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v t a =25c -4.5 continuous t j =150c (note 2) t a =70c i d -3.6 drain current pulsed i dm -20 a power dissipation (note 2) t a =25c p d 1.1 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 1) ja 110 c/w note: 1. surface mounted on fr4 board, t 5 sec ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics v ds =-20v, v gs =0v -1 drain-source leakage current i dss v ds =-20v, v gs =0v, t c =70c -5 a forward v gs =+12v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-12v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.6 -1.4 v v gs =-4.5v, i d =-4.5a 0.050 0.065 v gs =-2.7v, i d =-3.8a 0.070 0.090 static drain-source on-state resistance (note 2) r ds(on) v gs =-2.5v, i d =-3.7a 0.080 0.100 ? switching parameters (note 3) total gate charge q g 7.3 15 nc gate to source charge q gs 2.0 nc gate to drain charge q gd v gs =-4.5v, v ds =-10v, i d =-4.5a 1.9 nc gate resistance r g 3 15 ? turn-on delay time t d(on) 15 50 ns rise time t r 32 60 ns turn-off delay time t d(off) 50 100 ns fall-time t f v dd =-10v, i d -1.0a, v gen =-4.5v, r l =10 ? , r g =6 ? 45 80 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd i s =-1.7a, v gs =0v -0.8 -1.2 v body diode reverse recovery time t rr i f =-1.7a, di/dt=100a/s 35 80 ns notes: 2. pulse test; pulse width 300 s, duty cycle 2%. 3. guaranteed by design, not subject to production testing.
ut3443 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-557.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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